Laborator Microscopie Electronică | National Center for Materials Study and Testing

Scanning Electron Microscope VEGA TS 5130
Scanning Electron Microscopy (SEM) uses a focused electron beam to scan small areas of solid samples. Secondary electrons are emitted from the sample and are collected to create an area map of the secondary emissions. Since the intensity of secondary emission is very dependent on local morphology, the area map is a magnified image of the sample. Spatial resolution is as high as 1 nanometer for some instruments, but 4 nm is typical for most. Magnification factors can exceed 500,000. Backscattered electrons (BSE) and characteristic X-rays are also generated by the scanning beam and many instruments can utilize these signals for compositional analysis of microscopically small portions of the sample.
Technique Advantages: -rapid elemental analysis of small features -2 dimensional elemental mapping -semi-quantitative analysis with standards -Non-destructive Specifications: - Resolution: 3,5 nm at 30 kV and 4 mm WD - Magnification: 20x(at WD=30mm, HV=30kV, Image Size 512x512 pixels) to 500 000x - Accelerating voltage: 500 V to 30 kV - Electron Gun: Tungsten heated cathode - Probe Current: 1 pA to 2 µA - Chamber: Internal Diameter: 160mm Number of Ports : 7 Door Width: 1 - Detectors: SE - ET type (YAG Crystal) BSE - Annular scintillator type (YAG Crystal) with high sensitivity and high atomic number resolution EDX - Take off angle: from 35° to 45° at WD from 10 to 25 mm depending on diameter of the detector diameter - Specimen Stage: Type: Eucentric - Movements: X = 40 mm manual Y = 24 mm manual Z = 27 mm manual Z' = 6 mm manual Tilt: -70° to +70° eucentrically Rotation: 360° continuous manual - Working vacuum: 5x10^-3 Pa

Scanning Electron Microscope VEGA TS 5130

Scanning Electron Microscopy (SEM) uses a focused electron beam to scan small areas of solid samples. Secondary electrons are emitted from the sample and are collected to create an area map of the secondary emissions. Since the intensity of secondary emission is very dependent on local morphology, the area map is a magnified image of the sample. Spatial resolution is as high as 1 nanometer for some instruments, but 4 nm is typical for most. Magnification factors can exceed 500,000. Backscattered electrons (BSE) and characteristic X-rays are also generated by the scanning beam and many instruments can utilize these signals for compositional analysis of microscopically small portions of the sample.

Technique Advantages:
-rapid elemental analysis of small features
-2 dimensional elemental mapping
-semi-quantitative analysis with standards
-Non-destructive

Specifications:
- Resolution: 3,5 nm at 30 kV and 4 mm WD
- Magnification: 20x(at WD=30mm, HV=30kV, Image Size 512x512 pixels) to 500 000x
- Accelerating voltage: 500 V to 30 kV
- Electron Gun: Tungsten heated cathode
- Probe Current: 1 pA to 2 µA
- Chamber: Internal Diameter: 160mm
Number of Ports : 7
Door Width: 1
- Detectors: SE - ET type (YAG Crystal)
BSE - Annular scintillator type (YAG Crystal) with high sensitivity and high atomic number resolution
EDX - Take off angle: from 35° to 45° at WD from 10 to 25 mm depending on diameter of the detector diameter
- Specimen Stage: Type: Eucentric
- Movements: X = 40 mm manual
Y = 24 mm manual
Z = 27 mm manual
Z' = 6 mm manual
Tilt: -70° to +70° eucentrically
Rotation: 360° continuous manual
- Working vacuum: 5x10^-3 Pa